View Q67040-S4387_1162447.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IDP18E120 IDB18E120 Fast Switching EmCon Diode
Feature * 1200 V EmCon technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * Easy paralleling Product Summary VRRM IF VF T jmax
P-TO220-3.SMD
1200 18 1.65 150
P-TO220-2-2.
V A V C
Type IDP18E120 IDB18E120
Package P-TO220-2-2.
Ordering Code Q67040-S4493
Marking D18E120 D18E120
Pin 1 C NC
PIN 2 A C
PIN 3 A
P-TO220-3.SMD Q67040-S4387
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Symbol VRRM IF
Value 1200 31 19.8
Unit V A
Surge non repetitive forward current
TC=25C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
78 47 W 113 54
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
1.6mm(0.063 in.) from case for 10s
Tj , Tstg TS
-55...+150 260
C C
Rev.2
Page 1
2003-07-31
IDP18E120 IDB18E120
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 1.1 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=1200V, T j=25C V R=1200V, T j=150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.65 1.7 100 1400 V 2.15 -
Forward voltage drop
IF=18A, T j=25C IF=18A, T j=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31
IDP18E120 IDB18E120
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
V R=800V, IF=18A, diF/dt=800A/s, Tj =25C V R=800V, IF=18A, diF/dt=800A/s, Tj =125C V R=800V, IF=18A, diF/dt=800A/s, Tj =150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 195 280 300 20.2 24.4 25.3 1880 3200 3540 5.5 6.6 6.7 A nC -
Peak reverse current
V R=800V, IF = 18 A, di F/dt=800A/s, T j=25C V R=800V, IF =18A, diF/dt=800A/s, Tj=125C V R=800V, IF =18A, diF/dt=800A/s, Tj=150C
Reverse recovery charge
V R=800V, IF=18A, diF/dt=800A/s, Tj =25C V R=800V, IF =18A, diF/dt=800A/s, Tj=125C V R=800V, IF =18A, diF/dt=800A/s, Tj=150C
Reverse recovery softness factor
V R=800V, IF=18A, diF/dt=800A/s, Tj =25C V R=800V, IF=18A, diF/dt=800A/s, Tj =125C V R=800V, IF=18A, diF/dt=800A/s, Tj =150C
Rev.2
Page 3
2003-07-31
IDP18E120 IDB18E120
1 Power dissipation Ptot = f (TC) parameter: Tj 150C
120
2 Diode forward current IF = f(TC) parameter: Tj 150C
35
W A
100 90 25
P tot
80 70 60 50 40 30 20 10 0 25 50 75 100 10 15
IF
20 5 150 0 25
C TC
50
75
100
C TC
150
3 Typ. diode forward current IF = f (VF)
54
4 Typ. diode forward voltage VF = f (Tj)
2.6
A
42 36
V
-55C 25C 100C 150C
36A
2.2
VF
30 24 18 1.6 12 6 0 0 1.4
9A
IF
2
18A
1.8
0.5
1
1.5
2
V VF
3
1.2 -60
-20
20
60
100
C Tj
160
Rev.2
Page 4
2003-07-31
IDP18E120 IDB18E120
5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 800V, T j = 125C
1000
6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 800V, Tj = 125 C
nC
4600
ns
800 700
4200
36A
Q rr
36A 18A 9A
4000 3800 3600 3400 3200
18A
trr
600 500 400 300 200 100 200
3000 2800 2600 2400 2200 2000 300 400 500 600 700 800
9A
A/s 1000 di F/dt
1800 200
300
400
500
600
700
800
A/s 1000 di F/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 800V, T j = 125C
30
8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 800V, Tj = 125C
18
A
36A 18A 9A
14
Irr
S
20
12
36A 18A 9A
10 15
8
6 10 4
5 200
300
400
500
600
700
800
A/s 1000 di F/dt
2 200
300
400
500
600
700
800
A/s 1000 di F/dt
Rev.2
Page 5
2003-07-31
IDP18E120 IDB18E120
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T
K/W
10 1
IDP18E120
10 0
ZthJC
10 -1
10 -2
D = 0.50 0.20 0.10 single pulse 0.05 0.02 0.01
10
-3
10 -4
10 -5 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2
Page 6
2003-07-31
IDP18E120 IDB18E120
TO-220-2-2
A P
symbol [mm] min A 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 B C D E max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157
N
dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236
D U H B V
E
F W J G
F G H J K L M N P T U V W
1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40
0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157
X L
C
M
T K
X
Rev.2
Page 7
2003-07-31
IDP18E120 IDB18E120
TO-220-3-45 (P-TO220SMD)
dimensions symbol min A B C D E F G H K L M N P Q R S T U V W X Y Z [mm] max min 9.80 10.00 1.3 typ. 1.25 1.75 0.95 1.15 2.54 typ. 0.72 0.85 5.08 typ. 4.30 1.28 9.00 4.50 1.40 9.40 [inch] max 0.3858 0.3937 0.0512 typ. 0.0492 0.0689 0.0374 0.0453 0.1 typ. 0.0283 0.0335 0.2 typ. 0.1693 0.0504 0.3543 0.1772 0.0551 0.3701
2.30 2.50 14.1 typ. 0.00 0.20 3.30 3.90 8 max 1.70 2.50 0.50 0.65 10.8 typ. 1.35 typ. 6.43 typ. 4.60 typ. 9.40 typ. 16.15 typ.
0.0906 0.0984 0.5551 typ. 0.0000 0.0079 0.1299 0.1535 8 max 0.0669 0.0984 0.0197 0.0256 0.4252 typ. 0.0532 typ. 0.2532 typ. 0.1811 typ. 0.3701 typ. 0.6358 typ.
Rev.2
Page 8
2003-07-31
IDP18E120 IDB18E120
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.2
Page 9
2003-07-31

▲Up To Search▲

Price & Availability of Q67040-S4387

	To Download Q67040-S4387 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .